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| (R) STVD901J VARICAP FEATURES AND BENEFITS n n n High capacitance ratio Tuned for 900 Mhz band in mobile phone Surface mount device DESCRIPTION The STDV901J is a variable capacitance diode in SOD-323 package. This diode is intended to be used in mobile phone application to control the VCO frequency. A 47 K SOD-323 ABSOLUTE RATINGS (limiting values) Symbol VR IF Tstg Tj TL Parameter Continuous reverse voltage Continuous forward current Storage temperature range Maximum junction temperature Maximum temperature for soldering Value 6 20 - 65 to +150 150 260 Unit V mA C C C January 2003 - Ed: 2 1/4 STVD901J STATIC ELECTRICAL CHARACTERISTICS (Tj = 25C otherwise specified) Symbol IR Parameter Continuous reverse current Tests Conditions VR = 6V Min. Typ. Max. 10 Unit nA THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient Parameter Value 500 Unit C/W ELECTRICAL CHARACTERISTICS Symbol Ct rf Ls Cd (0.25 V) / Cd (2.7 V) Parameter Diode capacitance Diode series resistance Series inductance Capacitance ratio f = 1 MHz 2 Tests Conditions VR = 0.25 V VR = 1V f = 1 MHz f = 100 MHz Min. 3.6 Typ. 4 0.5 1.5 Max. 4.4 Unit pF Ohm nH Fig. 1: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1.E+01 Tj=125C Fig. 2: Relative variation of reverse leakage current versus junction temperature (typical values). IR[Tj] / IR[Tj=25C) 1.E+04 VR=6V 1.E+00 Tj=100C 1.E+03 Tj=75C 1.E-01 1.E+02 1.E-02 Tj=25C 1.E+01 VR(V) 1.E-03 0.0 2.0 4.0 6.0 8.0 10.0 1.E+00 25 50 Tj(C) 75 100 125 2/4 STVD901J Fig. 3: Junction capacitance versus reverse voltage applied (typical values). C(pF) 6.0 F=1MHz VOSC=30mVRMS Tj=25C Fig. 4: Relative variation of junction capacitance versus junction temperature (typical values). C[Tj] / C [Tj=25C] 1.10 1.08 1.06 F=1MHz VOSC=30mVRMS 5.0 4.0 1.04 1.02 VR=2.7V 3.0 1.00 2.0 0.98 0.96 1.0 VR=0V VR=0.25V VR(V) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.94 Tj(C) 0.92 -40 -20 0 20 40 60 80 100 120 140 Fig. 5: Serie resistance versus reverse voltage applied (typical values). Rs() 10 F=100MHz VOSC=100mVRMS Tj=25C Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (printed circuit board, epoxy FR4, Cu=35m). Rth(j-a)(C/W) 600 550 500 1 450 400 350 VR(V) 0 0.1 1.0 10.0 300 0 5 10 15 20 S(mm2) 25 30 35 40 45 50 Fig. 7: PSpice parameters. Diode parameters Parameters Is N Rs Isr Cjo M Vj Value 1.892e-8 1.256 0.62 8.090e-10 5.178e-12 0.638 0.487 V * Ls depends on package; this value is for SOD-323. Unit A A F Ls = 1.5nH * All others available parameters are set to default. 3/4 STVD901J PACKAGE MECHANICAL DATA SOD-323 DIMENSIONS H b E A1 REF. Millimeters Min. Max. 1.17 0 0.25 0.1 1.52 1.11 2.3 0.1 0.1 0.1 0.44 0.25 1.8 1.45 2.7 0.46 0.41 0 Inches Min. Max. 0.046 0.004 0.017 0.01 0.071 0.057 0.106 0.02 0.016 0.01 0.004 0.06 0.044 0.09 0.004 0.004 A A1 D A b c D E H L Q1 c Q1 L MARKING Type STVD901J Marking 47 Package SOD-323 Weight 0.005g Base qty 3000 Delivery mode Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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